Ga interdiffusion of substrate during inas nanowire growth.

Chemical composition analysis shows that nanowires were composed of the indium, gallium and arsenic elements, all homogeneously distributed along the nanowire. The presence of Ga in the chemical composition of the nanowire was surprising because only indium and arsenide were used as precursors during the MBE growth. Our results has been found that a strong interdiffusion of gaas (111)B substrate occurs during growth, creating a ternary ingaas alloy in the nanowires