Advanced Semiconductor and Organic Nano-Techniques Part II: Tunable Band-gaps and Nano-tubes

Product Description
Physical sciences and engineering, as well as biological sciences have recently made great strides in their respective fields. More importantly, the cross-fertilization of ideas, paradigms and methodologies have led to the unprecedented technological developments in areas such as information processing, full colour semiconductor displays, compact biosensors and controlled drug discovery to name a few.

Top experts in their respective fields have come together to discuss the latest developments and the future of micro-nano electronics. They investigate issues to be faced in ultimate limits such as single electron transitors; zero dimensional systems for unique properties; thresholdless lasers, electronics based on inexpensive and flexible plastic chips; cell manipulation; biosensors; DNA based computers; quantum computing; DNA sequencing chips; micro fluidics; nanomotors based on molecules; molecular electronics and recently emerging wide bandgap semiconductors for emitters, detectors and power amplifiers.

Contributions from top experts in this field
Covers a wide range of topics

BUY FROM AMAZON–>> Advanced Semiconductor and Organic Nano-Techniques Part II: Tunable Band-gaps and Nano-tubes

Self-aligned Side Gates for Nanowires and Nanotubes: The development and application of a new gate architecture for manipulating and defining 1D quantum dots with possibilities for quantum computation

Product Description
The book presents the experimental and theoretical development of a simple to fabricate new control architecture for nanotubes and nanowires. The architectures arrangement offers new possibilities for electrical, magnetic and mechanical control and a new spin detection architecture with applicability to quantum computation is presented. The fabrication procedure allows twin side gate electrodes to be placed within 5nm of a nanotube. The nanotube is suspended between the twin gate electrodes and the suspension creates an air gap between the nanotube and the gates. The air gap can help when applying high fields and should reduce noise, shielding and hysteretic effects. The twin gate structure allows for high field gradients which can be used to modify band gaps, while the proximity and dimensions assist the formation of well-defined tunnel barriers. Ultimately it is hoped that the architecture will aid the creation and control of quantum dots and offer the possibility of extending low dimensional experiments in GaAs to nanotubes and nanowires.

BUY FROM AMAZON–>> Self-aligned Side Gates for Nanowires and Nanotubes: The development and application of a new gate architecture for manipulating and defining 1D quantum dots with possibilities for quantum computation