Giant Magneto-Resistance Devices

Product Description
This book deals with the application of giant magneto-resistance (GMR) effects to electronic devices. It will appeal to engineers and graduate students in the fields of electronic devices and materials. The main subjects are magnetic sensors with high resolution and magnetic read heads with high sensitivity, required for hard-disk drives with recording densities of several gigabytes. Another important subject is novel magnetic random-access memories (MRAM) with non-volatile non-destructive and radiation-resistant characteristics. Other topics include future GMR devices based on bipolar spin transistors, spin field-effect transistors (FETs) and double-tunnel junctions.

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Properties and Applications of Carbon Nanotube Films

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Since 1950, the adage has been “silicon for electronics, carbon for life.” However, the discovery in 1993 of the single-wall carbon nanotube (SWNT), sparked interest in everyone from scientists to VCs over the electric potential of SWNTs, particularly for use in flexible or printable electronics. This book provides an overview of the fabrication, properties, and applications of thin films (networks) of SWNTs. Various aqueous phase dispersion and coating methods on rigid and flexible substrates will be explored. Fundamental transport studies on films of various densities, as a function of temperature and frequency, are fit to theory. Thin, transparent films of SWNTs (and graphene) are fabricated, and evaluated for use in applications that require a transparent electrode, such as touch screens, displays, and solar cells. Solution deposited films are made into FETs for the first demonstration of a transparent SWNT transistor. Finally, the photophysics of a por­phyrin/SWNT composite are measured, and evaluated for possible uses as an artificial eye. This book should prove especially useful for professionals in the fields of nanotechnology and flexible electronics.

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Nanotechnology Will Improve Computer Efficiency and Power

The next 10 years promises to be an exciting period in the history of computers and networks as nanotechnology takes off to redefine a new level in the way computers are manufactured. It’s not entirely radical as the Lithographic principles behind the manufacturing process can be adopted for nanotech processes. What is revolutionary are the minute molecular-level sizes at which those circuit boards can now be made. This is the core of nanotech – derived from the Greek nano which means tiny. And in this case, we’re talking molecular tiny. In quantitative scientific terms, “tiny” is in the area of a billionth of a meter or around 1/500th the width of a hair strand. That’s “nano” mathematically.

Nanotechnology in Computers

Nanotechnology ushers in a more meaningful and useful age of miniaturization. The Integrated Chip of the 70s did the same thing that was seminal in manufacturing increasingly smaller chips that now power our cellphones and computers. But they have their limits and we have reached that.

With molecule-sized nanotech based manufacturing of processor chips, memory modules and storage devices, these limits can be breached that will eventually bring two things: (1) more powerful, more cost-effective and more power-efficient computers across all platforms, from mainframes down to laptops; and (2) smaller computer footprints for the same power and efficiencies we currently have.

- Nanotech Microprocessors

With greater transistor densities, processor chips these days have grown so powerful that they require more effective cooling systems employing fans and even water-based coolants usually reserved in mainframes. Lithographic technologies that create those wafer thin circuits containing millions of etched transistors have reached practical limits. Nanotechnology’s molecular-level lithography is the next step. Not only will it produce more powerful computer engines, it can make them operate cooler and with less bulk. Associated circuits in the motherboards and even add-on daughterboards like video graphics and sound processors can be integrated into smaller boards so that computers over the next decade can be no larger than the largest cell phones of today.

- Nanomemories

Memory modules in the 1GB to 2GB range are becoming common these days. Even cellphones have memories in that magnitude. But just like processor chips, you have a manufacturing limit to contend with which bears down on the maximum speed, size and powering efficiency of memory chips. Over the next few years, more powerful RAM with higher capacities and speeds but lower costs can be made from nonmagnetic technology.

- Solid State ”hard drives”

Disk drives have likewise reach the size and capacity limits. If you look at your flash drives now commonly sporting 4, 8 and 16 GB capacities, they are all solid state storage devices that hold the promise of greater storage capacities and efficiencies in computers.

They are also immune to physical shocks or mechanical crashes that hard disks are prone to suffer. But they are expensive to produce and have the highest costs per megabyte of memory compared with a 1Terrabyte hard disk we have at this time. Nanotechnology should take care of that. Expect nanotech-based flash drive technology to evolve with higher memory capacity that will eventually make it more cost effective to replace current electro-mechanical hard drives. GP

Enhanced Field Emission from Metallic Surfaces and Nanowires

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The role of material properties, surface preparation and cleaning techniques on Nb and Cu was studied for EFE , which is disastrous for high field vacuum devices. Dry ice cleaning is found to suppress EFE from the metallic surfaces very efficiently. High purity single crystal and large grain Nb samples showed the onset of FE at high fields (120 ? 200 MV/m).For the first time, the grain boundary assisted field emission was observed for Nb. A correlationbetween size of emitters and onset fields is obtained, which sets a threshold for the tolerable defect size to achieve the envisaged accelerating gradients in cavities reliably.Additionaly, the systematic study performed on electrochemically deposited Cu, Ni and Au nanowires of different aspect ratios and spatial distribution for cold cathode applications. In our findings, Au coating on Ni nanowires provided improved FE properties. Further, in Au Nanowires up to 40 % percentage of the wires were emitting. Achieving much larger emitter number densities ~10^5 cm^?2 at 6 V/µm compared to CNT cathodes with respect to the number of deposited nanostructures, makes Au NWs interesting for cold cathode applications.

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