Circuits at the Nanoscale: Communications, Imaging, and Sensing

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Circuits for Emerging Technologies Beyond CMOS

New exciting opportunities are abounding in the field of body area networks, wireless communications, data networking, and optical imaging. In response to these developments, top-notch international experts in industry and academia present Circuits at the Nanoscale: Communications, Imaging, and Sensing. This volume, unique in both its scope and its focus, addresses the state-of-the-art in integrated circuit design in the context of emerging systems.

A must for anyone serious about circuit design for future technologies, this book discusses emerging materials that can take system performance beyond standard CMOS. These include Silicon on Insulator (SOI), Silicon Germanium (SiGe), and Indium Phosphide (InP). Three-dimensional CMOS integration and co-integration with Microelectromechanical (MEMS) technology and radiation sensors are described as well. Topics in the book are divided into comprehensive sections on emerging design techniques, mixed-signal CMOS circuits, circuits for communications, and circuits for imaging and sensing.

Dr. Krzysztof Iniewski is a director at CMOS Emerging Technologies, Inc., a consulting company in Vancouver, British Columbia. His current research interests are in VLSI ciruits for medical applications. He has published over 100 research papers in international journals and conferences, and he holds 18 international patents granted in the United States, Canada, France, Germany, and Japan. In this volume, he has assembled the contributions of over 60 world-reknown experts who are at the top of their field in the world of circuit design, advancing the bank of knowledge for all who work in this exciting and burgeoning area.

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Defects in Microelectronic Materials and Devices

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Uncover the Defects that Compromise Performance and Reliability
As microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.

A comprehensive survey of defects that occur in silicon-based metal-oxide semiconductor field-effect transistor (MOSFET) technologies, this book also discusses flaws in linear bipolar technologies, silicon carbide-based devices, and gallium arsenide materials and devices. These defects can profoundly affect the yield, performance, long-term reliability, and radiation response of microelectronic devices and integrated circuits (ICs). Organizing the material to build understanding of the problems and provide a quick reference for scientists, engineers and technologists, this text reviews yield- and performance-limiting defects and impurities in the device silicon layer, in the gate insulator, and/or at the critical Si/SiO₂ interface. It then examines defects that impact production yield and long-term reliability, including:

• Vacancies, interstitials, and impurities (especially hydrogen)
• Negative bias temperature instabilities
• Defects in ultrathin oxides (SiO2 and silicon oxynitride)

Take A Proactive Approach
The authors condense decades of experience and perspectives of noted experimentalists and theorists to characterize defect properties and their impact on microelectronic devices. They identify the defects, offering solutions to avoid them and methods to detect them. These include the use of 3-D imaging, as well as electrical, analytical, computational, spectroscopic, and state-of-the-art microscopic methods. This book is a valuable look at challenges to come from emerging materials, such as high-K gate dielectrics and high-mobility substrates being developed to replace Si0₂ as the preferred gate dielectric material, and high-mobility substrates.

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