Defects in Microelectronic Materials and Devices

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Uncover the Defects that Compromise Performance and Reliability
As microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.

A comprehensive survey of defects that occur in silicon-based metal-oxide semiconductor field-effect transistor (MOSFET) technologies, this book also discusses flaws in linear bipolar technologies, silicon carbide-based devices, and gallium arsenide materials and devices. These defects can profoundly affect the yield, performance, long-term reliability, and radiation response of microelectronic devices and integrated circuits (ICs). Organizing the material to build understanding of the problems and provide a quick reference for scientists, engineers and technologists, this text reviews yield- and performance-limiting defects and impurities in the device silicon layer, in the gate insulator, and/or at the critical Si/SiO₂ interface. It then examines defects that impact production yield and long-term reliability, including:

• Vacancies, interstitials, and impurities (especially hydrogen)
• Negative bias temperature instabilities
• Defects in ultrathin oxides (SiO2 and silicon oxynitride)

Take A Proactive Approach
The authors condense decades of experience and perspectives of noted experimentalists and theorists to characterize defect properties and their impact on microelectronic devices. They identify the defects, offering solutions to avoid them and methods to detect them. These include the use of 3-D imaging, as well as electrical, analytical, computational, spectroscopic, and state-of-the-art microscopic methods. This book is a valuable look at challenges to come from emerging materials, such as high-K gate dielectrics and high-mobility substrates being developed to replace Si0₂ as the preferred gate dielectric material, and high-mobility substrates.

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Physics And Modeling Of Tera- And Nano-Devices

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Physics and Modeling of Tera- and Nano-Devices is a compilation of papers by well-respected researchers working in the field of physics and modeling of novel electronic and optoelectronic devices. The topics covered include devices based on carbon nanotubes, generation and detection of terahertz radiation in semiconductor structures including terahertz plasma oscillations and instabilities, terahertz photomixing in semiconductor heterostructures, spin and microwave-induced phenomena in low-dimensional systems, and various computational aspects of device modeling. Researchers as well as graduate and postgraduate students working in this field will benefit from reading this book.

Contents: Semiconductor Device Scaling: Physics, Transport, and the Role of Nanowires (D K Ferry et al.); Polaronic Effects at the Field Effect Junctions for Unconventional Semiconductors (N Kirova); Cellular Monte Carlo Simulation of High Field Transport in Semiconductor Devices (S M Goodnick & M Saraniti); Nanoelectronic Device Simulation Based on the Wigner Function Formalism (H Kosina); Quantum Simulations of Dual Gate MOSFET Devices: Building and Deploying Community Nanotechnology Software Tools on nanoHUB.org (S Ahmed et al.); Positive Magneto-Resistance in a Point Contact: Possible Manifestation of Interactions (V T Renard et al.); Impact of Intrinsic Parameter Fluctuations in Nano-CMOS Devices on Circuits and Systems (S Roy et al.); HEMT-Based Nanometer Devices Toward Terahertz Era (E Sano & T Otsuji); Plasma Waves in Two-Dimensional Electron Systems and Their Applications (V Ryzhii et al.); Resonant Terahertz Detection Antenna Utilizing Plasma Oscillations in Lateral Schottky Diode (A Satou et al.); Terahertz Polarization Controller Based on Electronic Dispersion Control of 2D Plasmons (T Nishimura & T Otsuji); Higher-Order Plasmon Resonances in GaN-Based Field-Effect Transistor Arrays (V V Popov et al.); Ultra-Highly Sensitive Terahertz Detection Using Carbon-Nanotube Quantum Dots (Y Kawano et al.); Generation of Ultrashort Electron Bunches in Nanostructures by Femtosecond Laser Pulses (A Gladun et al.); Characterization of Voltage-Controlled Oscillator Using RTD Transmission Line (K Narahara et al.); Infrared Quantum-Dot Detectors with Diffusion-Limited Capture (N Vagidov et al.); Magnetoresistance in Fe/MgO/Fe Magentic Tunnel Junctions (N N Beleskii et al.); Modeling and Implementation of Spin-Based Quantum Computation (M E Hawley et al.); Quantum Engineering for Threat Reduction and Homeland Security (G P Berman et al.); Strong Phase Shift Mask Manufacturing Error Impact on the 65nm Poly Line Printability (N Belova).

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Electronic DNA Detection: Carbon Nanotube Field Effect Transistors

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Spurred by the Human Genome Project, massive genetic profiling of myriad diseases is being widely sought. Despite high throughput and sensitivity the conventional workhorses, i.e., micorarrays and bead- based assays involve complicated protocols and considerable expense due to the need for fluorescent labeling. Consequently, their utility is limited only to handful of well-endowed institutions. This work attempts a low cost alternative suitable for point-of-care facilities deployment. A method of using biochips based on carbon nanotube field effect transistor arrays is proposed and the feasibility of using these sensors to detect the presence of specific DNA sequences, e.g. expressed genes, in a solution of DNA or RNA is demonstrated. This book provides an extensive review of current available DNA detection schemes, a detailed description of the carbon nanotube transistors, including modeling, fabrication and experimental setup, as well as results that demonstrate the efficacy for DNA detection. A section is also included describing a low-cost protein detection scheme based on gold nanoparticle surface plasmon resonant absorption.

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Current Transport Modeling of Carbon Nanotubes: Concepts, Analysis, and Design

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The purpose of this book is to develop a complete current transport model for carbon nanotube field effect transistors (CNT-FETs), applicable in the analysis and design of integrated circuits. The model is derived by investigating the electronic structure of carbon nanotubes and by using the basic laws of electrostatics in a field effect transistor. By describing the carrier concentration and charge distribution in carbon nanotubes, analytical expressions for the carbon nanotube potential are derived and used to obtain current transport equations for a CNT-FET. Threshold and saturation voltages expressions are each derived in the process and I-V characteristics for CNT-FETs are calculated using different combinations of chiral vectors. The voltage transfer characteristics of basic logic circuits based on complementary CNT-FETs are also studied. A small-signal radio frequency (rf) model is developed and it is shown to have cut-off frequencies in the upper GHz range. Finally, due to the rapid growth of carbon nanotubes as bio- and chemical sensing devices, possible methods to interpret and analyze CNT-FETs when utilized as biosensors are also presented.

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Electron Escape Dynamics

A presentation entitled “Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor” by Satoru Miyamoto from the Graduate School of Science and Technology at Keio University. The contents of which were published in Appl. Phys. Lett. 93, 222103 (2008). Full text can be found at link.aip.org Transport dynamics of a few electrons in a quantum dot are investigated in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistors. Time-resolved measurements in a nanosecond regime are carried out to determine the escape times of the first, second, and third electrons from the quantum dot originally containing three electrons. The escape time strongly depends on the number of electrons due to the single-electron charging effect in the quantum dot, which makes it possible to achieve selective ejection of a desired number of electrons.

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