Defects in Microelectronic Materials and Devices

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Uncover the Defects that Compromise Performance and Reliability
As microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.

A comprehensive survey of defects that occur in silicon-based metal-oxide semiconductor field-effect transistor (MOSFET) technologies, this book also discusses flaws in linear bipolar technologies, silicon carbide-based devices, and gallium arsenide materials and devices. These defects can profoundly affect the yield, performance, long-term reliability, and radiation response of microelectronic devices and integrated circuits (ICs). Organizing the material to build understanding of the problems and provide a quick reference for scientists, engineers and technologists, this text reviews yield- and performance-limiting defects and impurities in the device silicon layer, in the gate insulator, and/or at the critical Si/SiO₂ interface. It then examines defects that impact production yield and long-term reliability, including:

• Vacancies, interstitials, and impurities (especially hydrogen)
• Negative bias temperature instabilities
• Defects in ultrathin oxides (SiO2 and silicon oxynitride)

Take A Proactive Approach
The authors condense decades of experience and perspectives of noted experimentalists and theorists to characterize defect properties and their impact on microelectronic devices. They identify the defects, offering solutions to avoid them and methods to detect them. These include the use of 3-D imaging, as well as electrical, analytical, computational, spectroscopic, and state-of-the-art microscopic methods. This book is a valuable look at challenges to come from emerging materials, such as high-K gate dielectrics and high-mobility substrates being developed to replace Si0₂ as the preferred gate dielectric material, and high-mobility substrates.

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Compound Semiconductors 2004: Compound Semiconductors for Quantum Science and Nanostructures

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Compound Semiconductors 2004 was the 31st Symposium in this distinguished international series, held at Hoam Convention Center of Seoul National University, Seoul, Korea from September 12 to September 16, 2004. It attracted over 180 submissions from leading scientists in academic and industrial research institutions, and remains a major forum for the compound semiconductor research community since the first one held in 1966 at Edinburgh, UK under the name of ‘International Symposium on Gallium Arsenide and related Compounds’.
These proceedings provide an international perspective on the latest research and an overview of recent, important developments in III-V compounds, II-VI compounds and IV-IV compounds. In the total of 106 papers, notable progress was reported in the development of zinc oxide and spintronics. Steady advances were seen in traditional topics such as III-V based electronic and optoelectronic devices, growth and processing, and characterization. Novel research trends were observed in quantum structures, such as quantum wires and dots, which are promising for future developments in nanotechnology. As the primary forum for research into these materials and their device applications the book is an essential reference for researchers working on compound semiconductors in semiconductor physics, device physics, materials science, chemistry and electronic and electrical engineering.

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Inorganic Nanowires: Applications, Properties, and Characterization

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Advances in nanofabrication, characterization tools, and the drive to commercialize nanotechnology products have contributed to the significant increase in research on inorganic nanowires (INWs). Yet few if any books provide the necessary comprehensive and coherent account of this important evolution.

Presenting essential information on both popular and emerging varieties, Inorganic Nanowires: Applications, Properties, and Characterization addresses the growth, characterization, and properties of nanowires. Authors Meyyappan—a NASA scientist and renowned leader in nanoscience and technology—and Sunkara—a major contributor to nanowire literature—offer an in-depth overview of various types of nanowires, including semiconducting, metallic, and oxide varieties. This book also includes extensive coverage of applications that use INWs and those with great potential in electronics, optoelectronics, field emission, thermoelectric devices, and sensors.

This invaluable reference:

• Traces the evolution of nanotechnology and classifies nanomaterials
• Describes nanowires and their potential applications to illustrate connectivity and continuity
• Discusses growth techniques, at both laboratory and commercial scales
• Evaluates the most important aspects of classical thermodynamics associated with the nucleation and growth of nanowires
• Details the development of silicon, germanium, gallium arsenide, and other materials in the form of nanowires used in electronics applications
• Explores the physical, electronic and other properties of nanowires

The explosion of nanotechnology research activities for various applications is due in large part to the advances in the growth of nanowires. Continued development of novel nanostructured materials is essential to the success of so many economic sectors, ranging from computing and communications to transportation and medicine. This volume discusses how and why nanowires are ideal candidates to replace bulk and thin film materials. It covers the principles behind device operation and then adds a detailed assessment of nanowire fabrication, performance results, and future prospects and challenges, making this book a valuable resource for scientists and engineers in just about any field.

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