Ballistic transport in graphene pnp junctions with embedded local gates

Embedding pre-patterned gates in device substrate preserves carrier mobility
nanotechweb.org: lab talk

Bill Gates meets local young scientists

Bill Gates meets local young scientists
It’s one thing to learn about science and technology from your teachers, and it’s another to get pointers from one of the richest people on the planet.

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Nanometer Technology Designs: High-Quality Delay Tests

Product Description

Adopting new fabrication technologies not only provides higher integration and enhances performance, but also increases the types of manufacturing defects. With design size in millions of gates and working frequency in GHz timing-related defects havv become a high proportion of the total chip defects. For nanometer technology designs, the stuck-at fault test alone cannot ensure a high quality level of chips. At-speed tests using the transition fault model has become a requirement in technologies below 180nm.

Traditional at-speed test methods cannot guarantee high quality test results as they face many new challenges. Supply noise (including IR-drop, ground bounce, and Ldi/dt) effects on chip performance, high test pattern volume, low fault/defect coverage, small delay defect test pattern generation, high cost of test implementation and application, and utilizing low-cost testers are among these challenges. This book discusses these challenges in detail and proposes new techniques and methodologies to improve the overall quality of the transition fault test.

BUY FROM AMAZON–>> Nanometer Technology Designs: High-Quality Delay Tests

Self-aligned Side Gates for Nanowires and Nanotubes: The development and application of a new gate architecture for manipulating and defining 1D quantum dots with possibilities for quantum computation

Product Description
The book presents the experimental and theoretical development of a simple to fabricate new control architecture for nanotubes and nanowires. The architectures arrangement offers new possibilities for electrical, magnetic and mechanical control and a new spin detection architecture with applicability to quantum computation is presented. The fabrication procedure allows twin side gate electrodes to be placed within 5nm of a nanotube. The nanotube is suspended between the twin gate electrodes and the suspension creates an air gap between the nanotube and the gates. The air gap can help when applying high fields and should reduce noise, shielding and hysteretic effects. The twin gate structure allows for high field gradients which can be used to modify band gaps, while the proximity and dimensions assist the formation of well-defined tunnel barriers. Ultimately it is hoped that the architecture will aid the creation and control of quantum dots and offer the possibility of extending low dimensional experiments in GaAs to nanotubes and nanowires.

BUY FROM AMAZON–>> Self-aligned Side Gates for Nanowires and Nanotubes: The development and application of a new gate architecture for manipulating and defining 1D quantum dots with possibilities for quantum computation