III-Nitride Devices and Nanoengineering

Product Description
Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.

Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.

This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.

Contents: High Pressure Bulk Crystal Growth of (Ga,Al)N (P Geiser et al.); Fabrication of GaN Light Emitting Diodes by Laser-Off Technique (C-F Chu et al.); High-Resolution Electron Microscopy Observations of GaN-Based Laser Diodes (M Shiojiri); Growth and Development of III-Nitride Photodetectors (U Chowdhury et al.); Laser Diodes Grown on Bulk GaN Substrate (P Perlin et al.); III-Nitride Lighting Emitting Diodes on Si (N C Chen & C F Shih); III-Nitride Light-Emitting Devices on Patterned Sapphire Substrates (D S Wuu et al.); Recent Trends in Indium Nitride Nanomaterials (A Ganguly et al.); and other papers.

BUY FROM AMAZON–>> III-Nitride Devices and Nanoengineering

Electrical Transport Properties of Single III-Nitride Nanowires: GaN, InN and ZnO nanowires

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The electrical transport properties studies on single GaN and InN nanowires were studied. First, we report studies on the effect of UV/ozone cleaning on n-type GaN nanowires. After subtraction of this contact resistivity from the total resistance of the nanowire, it was found that the ozone treatment reduced the apparent resistivity from 71 to 0.7 ¿ cm. Second, a simple fabrication process for single GaN nanowire field effect transistor on Si substrate was demonstrated. The as-grown GaN nanowires exhibited n-type conductivity after annealing. From the temperature-dependence resistance behavior, the transport was dominated by tunneling in these annealed nanowires. Third, the transport properties of single InN nanowires grown by thermal catalytic chemical vapor deposition were measured as a function of both length/square of radius ratio and temperature. The usual Ohm¿s law will fail in small nanowires in the diffusive regime when the wire radius is comparable with electron de Broglie¿s wavelength or the scatter potential range.

BUY FROM AMAZON–>> Electrical Transport Properties of Single III-Nitride Nanowires: GaN, InN and ZnO nanowires