Scan of a crystal truncation rod from inas nanowires

The scan of a crystal truncation rod along the [111] surface normal through the [11-1] Bragg point of inas. The sample is inas nanowires epitaxially grown on an inas wafer. Peaks from the wafer, twin faults and a Wurtzite structure are seen.

Grazing Incidence X-Ray Diffraction of InAs NW

X-ray diffraction of inas vertically free-standing nanowire grown on gaas (111)B. The Hubbler diffractometer was setting up to measure in Grazing Incidence X-Ray Diffraction (GIXRD or GID) on (2,-2,0) direction. The inas islands, nanowires and gaas substrate peaks can be seen.

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