Applied Scanning Probe Methods II: Scanning Probe Microscopy Techniques

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Volumes II, III and IV examine the physical and technical foundation for recent progress in applied near-field scanning probe techniques, and build upon the first volume published in early 2004. The field is progressing so fast that there is a need for a second set of volumes to capture the latest developments. It constitutes a timely comprehensive overview of SPM applications, now that industrial applications span topographic and dynamical surface studies of thin-film semiconductors, polymers, paper, ceramics, and magnetic and biological materials. Volume II introduces scanning probe microscopy, including sensor technology, Volume III covers the whole range of characterization possibilities using SPM and Volume IV offers chapters on uses in various industrial applications. The international perspective offered in these three volumes – which belong together – contributes further to the evolution of SPM techniques.

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Applied Scanning Probe Methods III: Characterization

Product Description

Volumes II, III and IV examine the physical and technical foundation for recent progress in applied near-field scanning probe techniques, and build upon the first volume published in early 2004. The field is progressing so fast that there is a need for a second set of volumes to capture the latest developments. It constitutes a timely comprehensive overview of SPM applications, now that industrial applications span topographic and dynamical surface studies of thin-film semiconductors, polymers, paper, ceramics, and magnetic and biological materials. Volume II introduces scanning probe microscopy, including sensor technology, Volume III covers the whole range of characterization possibilities using SPM and Volume IV offers chapters on uses in various industrial applications. The international perspective offered in these three volumes – which belong together – contributes further to the evolution of SPM techniques.

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Compound Semiconductors 2004: Compound Semiconductors for Quantum Science and Nanostructures

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Compound Semiconductors 2004 was the 31st Symposium in this distinguished international series, held at Hoam Convention Center of Seoul National University, Seoul, Korea from September 12 to September 16, 2004. It attracted over 180 submissions from leading scientists in academic and industrial research institutions, and remains a major forum for the compound semiconductor research community since the first one held in 1966 at Edinburgh, UK under the name of ‘International Symposium on Gallium Arsenide and related Compounds’.
These proceedings provide an international perspective on the latest research and an overview of recent, important developments in III-V compounds, II-VI compounds and IV-IV compounds. In the total of 106 papers, notable progress was reported in the development of zinc oxide and spintronics. Steady advances were seen in traditional topics such as III-V based electronic and optoelectronic devices, growth and processing, and characterization. Novel research trends were observed in quantum structures, such as quantum wires and dots, which are promising for future developments in nanotechnology. As the primary forum for research into these materials and their device applications the book is an essential reference for researchers working on compound semiconductors in semiconductor physics, device physics, materials science, chemistry and electronic and electrical engineering.

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