Bonding in Microsystem Technology

Product Description

Bonding in Microsystem Technology concerns the exciting field of microsystems (known under varying names as: MEMS, µTAS (analytical or chemical Microsystems), MOEMS: the micro-miniature devices, utilizing extremely miniaturized mechanical structures made usually from silicon by wet deep anisotropic etching. Such structures cannot be used directly, they must be designed and fabricated as a part of the three – dimensional multi-layer sandwich built from silicon or silicon and glass. The procedures of formation of such a sandwich are known as bonding. The book contains the description of wet anisotropic micromachining of basic silicon micromechanical constructions and their utilization in microsystems followed by the detailed discussion of all of methods of bonding used for the formation of silicon and silicon-glass microsystems, with the special attention paid to the anodic bonding technique.

Bonding in Microsystem Technology starts with descriptions of terminology, kinds of microsystems and market analysis. Following this, presentation of mechanisms of wet etching, set of process parameters, description of micromachining methods, examples of procedures, process flow-charts and applications of basic micromechanical structures in microsystems are shown. Next, high-temperature, low temperature and room-temperature bonding and their applications in microsystem technology are presented. The following part of the book contains the detailed description of anodic bonding, starting from analysis of properties of glasses suitable for anodic bonding, and discussion of the nature of the process. Next all types of anodic bonding and sealing procedures used in microsystem technology are presented. This part of the book finishes with examples of applications of anodic bonding in microsystem technology taken from the literature but mainly based on the author’s personal experience.

Bonding in Microsystem Technology is addressed to scientists and researchers, as well as to academic teachers and students, engineers active in the field of electric/electronics and microelectronics. It can serve as the encyclopaedia of wet etching and bonding for microsystem technology. Technological results presented in the book have been tested experimentally by the author and his team, and can be utilized in day-to-day laboratory practice. Special attention has been paid to the highest level of accessibility of the book by students. The book contains a large number of illustrations, algorithmic flow-charts and microsystems description and a rich index of literature sources.

BUY FROM AMAZON–>> Bonding in Microsystem Technology

Silicon Nanoelectronic Devices: Fabrication and Transport Properties

Product Description
It is estimated that the scaling of conventional silicon MOSFETs will end around the year 2020. While this certainly does not preclude the use of silicon in future devices, it does require new thoughts on the types of practical devices that can be used in integrated circuits. Namely, those that reduce power and work at least partly on the principles of quantum mechanics (such as spintronic or tunneling devices) will tend to be favored. The research presented herein is based on the fabrication and transport properties of nanometer-scale devices in silicon. The most promising of these structures are nanowires fabricated with a scanning tunneling microscope (STM). These high-density nanowires display the low-temperature phenomena of weak localization and one-dimensional conduction. Long-term applications of such nanowires and derivative devices include alternatives to conventional CMOS transistors and very sensitive charge and/or spin-detection devices. In addition, focused ion beams (FIBs) have been used to directly and precisely implant ions in the hope that they may be used to contact nanodevices, but surface damage may preclude that possibility.

BUY FROM AMAZON–>> Silicon Nanoelectronic Devices: Fabrication and Transport Properties