Giant Magneto-Resistance Devices

Product Description
This book deals with the application of giant magneto-resistance (GMR) effects to electronic devices. It will appeal to engineers and graduate students in the fields of electronic devices and materials. The main subjects are magnetic sensors with high resolution and magnetic read heads with high sensitivity, required for hard-disk drives with recording densities of several gigabytes. Another important subject is novel magnetic random-access memories (MRAM) with non-volatile non-destructive and radiation-resistant characteristics. Other topics include future GMR devices based on bipolar spin transistors, spin field-effect transistors (FETs) and double-tunnel junctions.

BUY FROM AMAZON–>> Giant Magneto-Resistance Devices

Embedded Memories for Nano-Scale VLSIs

Product Description

The book provides a comprehensive and in-depth view on the state-of-the-art embedded memory technologies. The book helps practicing engineers grasp key technology attributes and advanced design techniques in nano-scale VLSI design. It also helps them make decisions concerning the right design tradeoffs in real product development.

This book first provides an overview on the landscape and trend of embedded memory in various VLSI system designs, including high-performance microprocessor, low-power mobile handheld devices, micro-controllers, and various consumer electronics. It then shows an in-depth view on each different type of embedded memory technology, including high-speed SRAM, ultra-low-voltage and alternative SRAM, embedded DRAM, embedded nonvolatile memory, and emerging or so-called “universal” memories such as FeRAM, MRAM, and PRAM. Each topic covers all the key technology attributes from a product application perspective, ranging from technology scaling challenges to advanced circuit techniques for achieving optimal design tradeoff in performance and power. As VLSI systems become increasingly dependent on on-die memory to provide adequate memory bandwidth for various applications, the book gives readers a broader view of this important field and helps them to achieve their optimal design goals for different applications.

This book provides readers a broad knowledge on the entire embedded memory technologies in order to better comprehend the technologies and create optimal memory solutions in real applications.

BUY FROM AMAZON–>> Embedded Memories for Nano-Scale VLSIs

Single-Electron Devices and Circuits in Silicon

Product Description
This book reviews research on single-electron devices and circuits in silicon. These devices provide a means to control electronic charge at the one-electron level and are promising systems for the development of few-electron, nanoscale electronic circuits. The book considers the design, fabrication, and characterization of single-electron transistors, single-electron memories, few-electron transfer devices such as electron pumps and turnstiles, and single-electron logic devices. A review of the many different approaches used for the experimental realisation of these devices is provided and devices developed during the author’s own research are used as detailed examples. An introduction to the physics of single-electron charging effects is included.

• Introduction
• Single-Electron Charging Effects
• Single-Electron Transistors in Silicon
• Single-Electron Memory
• Few-Electron Transfer Devices
• Single-Electron Logic Circuits

BUY FROM AMAZON–>> Single-Electron Devices and Circuits in Silicon

Ultra-Low Voltage Nano-Scale Memories

Product Description

Ultra-low voltage large-scale integrated circuits (LSIs) in nano-scale technologies are needed to:

-Meet the needs of a rapidly growing mobile cell phone market
-Offset a significant increase in the power dissipation of high-end microprocessor units.

Low power large capacity memories are a necessary component of low voltage LSIs. Many challenges arise in the process of achieving such memories as their devices and voltages are scaled down below 100nm and sub-1-V. A high signal-to-noise (S/N) ratio design is necessary to deal with small signal voltages from low-voltage memory cells in the presence of large noise sources in a high-density memory-cell array. Moreover, innovative circuits and devices are needed to resolve the increasing problems of leakage currents and variability in both speed and leakage. Since the solutions to these problems lie between different fields, (e.g., digital and analog, SRAM and DRAM) a multidisciplinary approach is needed.

Ultra-Low Voltage Nano-Scale Memories is an authoritative monograph that addresses these challenges. This book is written for memory and circuit designers as well as for researchers and students who are interested in ultra-low voltage nano-scale memory LSIs.

BUY FROM AMAZON–>> Ultra-Low Voltage Nano-Scale Memories

Molecular Devices and Machines: Concepts and Perspectives for the Nanoworld

Product Description
Targeted at a broad audience ranging from chemists and biochemists to physicists and engineers, Molecular Devices and Machines: Concepts and Perspectives for the Nanoworld covers advanced research while being written in an easily understandable language accessible to any interested researcher or graduate student.

Following an introduction to the general concepts, the authors go on to discuss devices for processing electrons and electronic energy, memories, logic gates and related systems, and, finally, molecular-scale machines.

BUY FROM AMAZON–>> Molecular Devices and Machines: Concepts and Perspectives for the Nanoworld

« Previous Page