Nanoscale Transistors: Device Physics, Modeling and Simulation

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The continuous scaling of transistors in the last half of century has been the driving force for electronics. The channel length of the transistors in production today is below 100nm. A wide variety of devices are also being explored to complement or even replace silicon transistors at molecular scales. Similarities between nanoscale and micronscale transistors exist, but nanotransistors also behave in drastically different ways. For example, ballistic transport and quantum effects become much more important. To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary.

The book provides a description of the recent development of theory, modeling, and simulation of nanotransistors for engineers and scientists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors.

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Modeling MEMS and NEMS

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Designing small structures necessitates an a priori understanding of various device behaviors. The way to gain such understanding is to construct, analyze, and interpret the proper mathematical model.Through such models, Modeling MEMS and NEMS illuminates microscale and nanoscale phenomena, thereby facilitating the design and optimization of micro- and nanoscale devices. After some introductory material, a review of continuum mechanics, and a study of scaling, the book is organized around phenomena. Each chapter addresses a sequence of real devices that share a common feature. The authors abstract that feature from the devices and present the mathematical tools needed to model it. They construct, analyze, and interpret a series of models of increasing complexity, then at the end of the chapter, they return to one of the devices described, apply the model to it, and interpret the analysis.In the beginning, the world of microdevices was dominated by experimental work and the development of fabrication techniques. As it matures, optimization and innovative designs are moving to the forefront. Modeling MEMS and NEMS not only provides the practical background and tools needed to design and optimize microdevices but it also helps develop the intuitive understanding that can lead to developing new and better designs and devices.

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Nanophotonics with Surface Plasmons

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Current developments in optical technologies are being directed toward nanoscale devices with subwavelength dimensions, in which photons are manipulated on the nanoscale. Although light is clearly the fastest means to send information to and from the nanoscale, there is a fundamental incompatibility between light at the microscale and devices and processes at the nanoscale. Nanostructured metals which support surface plasmon modes can concentrate electromagnetic (EM) fields to a small fraction of a wavelength while enhancing local field strengths by several orders of magnitude. For this reason, plasmonic nanostructures can serve as optical couplers across the nano-micro interface: metal-dielectric and metal-semiconductor nanostructures can act as optical nanoantennae and enhance light matter coupling in nanoscale devices. This book describes how one can fully integrate plasmonic nanostructures into dielectric, semiconductor, and molecular photonic devices, for guiding photons across the nano-micro interface and for detecting molecules with unsurpassed sensitivity.

·Nanophotonics and Nanoplasmonics
·Metamaterials and negative-index materials
·Plasmon-enhanced sensing and spectroscopy
·Imaging and sensing on the nanoscale
·Metal Optics

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Nanoscale Devices – Fundamentals and Applications

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Over the last decade the interest in nanoscale materials and their applications in novel electronic devices have been increasing tremendously. This is caused by the unique properties of nanoscale materials and the outstanding performance of nanoscale devices. The fascinating and often unrivalled properties of nanoscale materials and devices opened new and sometimes unexpected fields of applications. Today, the widespread applications range from the detection of explosives, drugs and fissionable materials to bio- and infrared-sensors, spintronic devices, data storage media, magnetic read heads for computer hard disks, single-electron devices, microwave electronic devices, and many more.

This book contains a collection of papers giving insight into the fundamentals and applications of nanoscale devices. The papers have been presented at the NATO Advanced Research Workshop on Nanoscale Devices – Fundamentals and Applications (NDFA-2004, ARW 980607) held in Kishinev (Chisinau), Moldova, on September 18-22, 2004. The main focus of the contributions is on the synthesis and characterization of nanoscale magnetic materials, the fundamental physics and materials aspects of solid-state nanostructures, the development of novel device concepts and design principles for nanoscale devices, as well as on applications in electronics with special emphasis on defence against the threat of terrorism.

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Quantum Semiconductor Devices and Technologies

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Quantum Effects in Semiconductor Materials and Devices provides a comprehensive overview of the fabrication and operation of nanoscale devices. It begins with a discussion of the critical issue of the relationship between the characteristic separation of energy levels relative to the temperature of operation and the issue of temperature rise due to energy dissipation. A presentation of the device structures that implement memory circuits and lasers with predictable properties is then given before the array of challenges to the current level of fabrication technologies. The following three chapters are devoted to a discussion of the self-organizational techniques that can be used to address these challenges. This is a unique text that not only reviews the current state of the art but also provides a view of the likely developments in this important and rapidly developing field. It is essential reading for all involved in quantum semiconductors.

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