Electrons tunnel through ultrathin boron nitride

Result bodes well for applications such as tunnel devices and ultrafast field-effect transistors
nanotechweb.org: tech update

Electrons tunnel through ultrathin boron nitride

Result bodes well for applications such as tunnel devices and ultrafast field-effect transistors
nanotechweb.org: all news

Boron nitride nanoribbons as good as their carbon counterparts

A new and simple technique to make BNNRs for spintronics and optoelectronics
nanotechweb.org: all news

Mechanics of Boron Nitride Nanotubes: A Continuum Theory Based on the Interatomic Potential

Product Description
Boron nitride nanotubes display unique properties and have many potential applications. An atomistic-based continuum theory is developed for boron nitride nanotubes. The continuum constitutive model for boron nitride nanotubes is obtained directly from the interatomic potential for boron and nitrogen. Such an approach involves no additional fitting parameters beyond those introduced in the interatomic potential. The atomistic-based continuum theory is then applied to study the elastic modulus, stress-strain curve and nonlinear bifurcation in boron nitride nanotubes. An analytic approach is then established to determine the tensile and bending rigidity of a hexagonal boron nitride (h-BN) monolayer and single- and multi-wall boron nitride nanotubes directly from the interatomic potential. Such an approach enables one to bypass atomistic simulations and to give the tensile and bending rigidity in terms of the parameters in the potential. The thickness of h-BN monolayer is also discussed.A hybrid atomistic/continuum model based on the interatomic potential for boron nitride is also developed to study the Stone-Wales transformation in boron nitride nanotubes under tension.

BUY FROM AMAZON–>> Mechanics of Boron Nitride Nanotubes: A Continuum Theory Based on the Interatomic Potential

Electrical Transport Properties of Single III-Nitride Nanowires: GaN, InN and ZnO nanowires

Product Description
The electrical transport properties studies on single GaN and InN nanowires were studied. First, we report studies on the effect of UV/ozone cleaning on n-type GaN nanowires. After subtraction of this contact resistivity from the total resistance of the nanowire, it was found that the ozone treatment reduced the apparent resistivity from 71 to 0.7 ¿ cm. Second, a simple fabrication process for single GaN nanowire field effect transistor on Si substrate was demonstrated. The as-grown GaN nanowires exhibited n-type conductivity after annealing. From the temperature-dependence resistance behavior, the transport was dominated by tunneling in these annealed nanowires. Third, the transport properties of single InN nanowires grown by thermal catalytic chemical vapor deposition were measured as a function of both length/square of radius ratio and temperature. The usual Ohm¿s law will fail in small nanowires in the diffusive regime when the wire radius is comparable with electron de Broglie¿s wavelength or the scatter potential range.

BUY FROM AMAZON–>> Electrical Transport Properties of Single III-Nitride Nanowires: GaN, InN and ZnO nanowires