Physico-Chemical Phenomena in Thin Films and at Solid Surfaces, Volume 34

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The book is devoted to the consideration of the different processes taking place in thin films and at surfaces. Since the most important physico-chemical phenomena in such media are accompanied by the rearrangement of an intra- and intermolecular coordinates and consequently a surrounding molecular ensemble, the theory of radiationless multi-vibrational transitions is used for its description. The second part of the book considers the numerous surface phenomena. And in the third part is described the preparation methods and characteristics of different types of thin films.

Both experimental and theoretical descriptions are represented. Media rearrangement coupled with the reagent transformation largely determines the absolute value and temperature dependence of the rate constants and other characteristics of the considered processes. These effects are described at the atomic or molecular level based on the multi-phonon theory, starting from the first pioneering studies through to contemporary studies.

A number of questions are included at the end of many chapters to further reinforce the material presented.

· Unified approach to the description of numerous physico-chemical phenomena in different materials
· Based on the pioneering research work of the authors
· Explantion of a variety of experimental observations
· Material is presented at two levels of complexity for specialists and non-specialists
· Identifies existing and potential applications of the processes and phenomena
· Includes questions at the end of some chapters to further reinforce the material discussed

BUY FROM AMAZON–>> Physico-Chemical Phenomena in Thin Films and at Solid Surfaces, Volume 34

The Physics of Low-Dimensional Structures: From Quantum Wells to DNA and Artificial Atoms

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This book covers the field of low dimensional structures, starting from the selectively doped double heterostructures n-A1GaAs/GaAs/n-A1GaAs, and (strained) p-Si/SiGe/p-Si (quantum wells). The behaviour of the sheet electron density, the subband populations and energies as a function of the well width, the spacer thickness and the doping concentration is analysed. The temperature dependence of the bulk electron concentration versus the quasi-2DEG are discussed. In the framework of Boltzmann’s transport theory, a detailed study of the mobility is presented at low and high temperatures, taking into account all the relevant scattering mechanisms. The pseudomorphic Si/SiGe undoped quantum wells are a perfect example for the study of the non-parabolicity of the hole-bands. For the first time in a book, an exact solution of the multiband effective mass equation that describes the heavy, light and split-off hole valence bands is introduced, and interband transitions and selection rules are obtained. Reducing dimensionality, new aspects concerning optical and transport properties of quantum wires (QWRS) is discussed. Specifically, the photoluminescence and the microphotoluminescence spectra of V-shaped QWRS is theoretically interpreted leading to a realistic cartography of the interface roughness of these systems. A computational approach for the solution of the eigenvalue problem in low-dimensional systems of complex but realistic geometry is also presented for the first time in a book, and transport theoretical considerations will lead to a systematic study of the mobility. As DNA could be considered as a one-dimensional “molecular wire” the study of carrier transport along DNA is discussed in terms of hopping transport. A computational scheme is presented, which allows the study of near-field magnetoabsorpsion spectra of Quantum Dots (QD) of any given geometry, under magnetic field of any orientation. The effect of the spatial confinement imposed by the QD dimensions and the magnetic confinement governed by the magnetic field are explored. The influence of the Coulomb interactions between electrons and holes is also discussed. The applicability of the method in actual experiments, i.e. the illumination of a nanostructure with a near-field probe in conjunction with the simultaneous application of an external magnetic field, may become a challenge to experimentalists. Finally, magnetothermoelectic transport in the fractional quantum Hall effect (FQHE) regime is discussed. The theoretical framework for the calculation of the resistivity, the thermopower and the thermal conductivity for two-dimensional electron and hole gases, at low temperatures and strong perpendicular magnetic fields is outlined. The composite fermion picture enables the use of the integer quantum Hall effect and Shubnikov – de Haas conductivity models for a quantitative comparison with experiment. A study on the validity of fundamental physical laws such as the Wiedemann-Franz law in two-dimensional structures is also presented.

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Electrical Transport Properties of Single III-Nitride Nanowires: GaN, InN and ZnO nanowires

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The electrical transport properties studies on single GaN and InN nanowires were studied. First, we report studies on the effect of UV/ozone cleaning on n-type GaN nanowires. After subtraction of this contact resistivity from the total resistance of the nanowire, it was found that the ozone treatment reduced the apparent resistivity from 71 to 0.7 ¿ cm. Second, a simple fabrication process for single GaN nanowire field effect transistor on Si substrate was demonstrated. The as-grown GaN nanowires exhibited n-type conductivity after annealing. From the temperature-dependence resistance behavior, the transport was dominated by tunneling in these annealed nanowires. Third, the transport properties of single InN nanowires grown by thermal catalytic chemical vapor deposition were measured as a function of both length/square of radius ratio and temperature. The usual Ohm¿s law will fail in small nanowires in the diffusive regime when the wire radius is comparable with electron de Broglie¿s wavelength or the scatter potential range.

BUY FROM AMAZON–>> Electrical Transport Properties of Single III-Nitride Nanowires: GaN, InN and ZnO nanowires