Fabrication and Characterization of ZnO Nanowire Transistors: Vertically Aligned ZnO Nanowire Arrays, Multiple Channel Nanowire-based Transistors

Product Description
Recently, a variety of physical and chemical methods have been used to synthesize and obtain 1- dimensional semiconductor nanostructures. For the cause of easier nanostructure formation and device applications, we begin this study with the investigation in growth mechanism and well- controlled condition to synthesize 1-dimensional ZnO nanowires. For the low dimensional structure of nanowire, the manipulation of individual nanowire has become an unsettled and crucial issue. Therefore, we use a printing method to realize the nanowire alignment in broad classes. In addition, our investigators would explore the correlation between the quality of 1- dimensional material and electronic transport properties of ZnO nanowire-based transistors. In the fabrication of nanowire transistors, the existing common method of dielectrophoresis (DEP) process would impose a contact problem, and an additional or subsequent metallization is necessary for the electronic connection. Therefore, we will develop a novel method to simultaneously obtain aligned nanowire arrays and device pattering by combining DEP and imprinting processes.

BUY FROM AMAZON–>> Fabrication and Characterization of ZnO Nanowire Transistors: Vertically Aligned ZnO Nanowire Arrays, Multiple Channel Nanowire-based Transistors

Electrical Transport Properties of Single III-Nitride Nanowires: GaN, InN and ZnO nanowires

Product Description
The electrical transport properties studies on single GaN and InN nanowires were studied. First, we report studies on the effect of UV/ozone cleaning on n-type GaN nanowires. After subtraction of this contact resistivity from the total resistance of the nanowire, it was found that the ozone treatment reduced the apparent resistivity from 71 to 0.7 ¿ cm. Second, a simple fabrication process for single GaN nanowire field effect transistor on Si substrate was demonstrated. The as-grown GaN nanowires exhibited n-type conductivity after annealing. From the temperature-dependence resistance behavior, the transport was dominated by tunneling in these annealed nanowires. Third, the transport properties of single InN nanowires grown by thermal catalytic chemical vapor deposition were measured as a function of both length/square of radius ratio and temperature. The usual Ohm¿s law will fail in small nanowires in the diffusive regime when the wire radius is comparable with electron de Broglie¿s wavelength or the scatter potential range.

BUY FROM AMAZON–>> Electrical Transport Properties of Single III-Nitride Nanowires: GaN, InN and ZnO nanowires